Gallium nitride semiconductor devices

摘要

A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six µm disposed on a sapphire substrate; an n- doped GaN layer having a thickness greater than one µm disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n- doped GaN layer and fanning a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.