Flip chip package incorporating metallurgical bond to enhance thermal conduction

摘要

An integrated circuit device 10 incorporating a metallurgical bond to enhance thermal conduction to a heat sink 28. In a semiconductor device, a surface of an integrated circuit die 14 is metallurgically bonded to a surface of a heat sink 28. In an exemplary method of. manufacturing the device, the upper surface of a package substrate 12 includes an inner region and a peripheral region. The integrated circuit die 14 is positioned over the substrate surface and a active surface 16 of the integrated circuit die 14 is placed in contact with the package substrate 12. A metallic layer 30 is formed on a second opposing surface 18 of the integrated circuit die 14. A preform is positioned on the metallic layer and a heat sink 28 is positioned over the preform. A joint layer is formed with the preform, metallurgically bonding the heat sink 28 to the second surface 18 of the integrated circuit die 14.