| 摘要 |
PURPOSE: A silicon carbide semiconductor device is provided to reduce a property difference without increasing the number of manufacturing processes. CONSTITUTION: A first conductive silicon carbide semiconductor substrate(1) is provided. A plurality of concave parts(10) is intermittently formed on the surface of the silicon carbide semiconductor substrate. A second conductive semiconductor layer(5) is formed on the silicon carbide semiconductor substrate. A Schottky electrode(6) is selectively formed on the surface of the silicon carbide semiconductor substrate. An ohmic electrode is formed on the rear side of the first conductive silicon carbide semiconductor substrate.
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