发明名称 Mask blank for EUV exposure and mask for EUV exposure
摘要 Provided are a mask for EUV exposure and a mask blank for EUV exposure for manufacturing the same, so as to improve the contrast of ultraviolet inspection light and improve the inspection performance for the mask. This mask blank for EUV exposure includes a substrate, a reflecting layer which is provided on the substrate and reflects EUV light, and an absorbent layer which is provided on the reflecting layer and absorbs EUV light. Reflectance of light at a wavelength between 150 nm and 300 nm is greater at the absorbent layer than that of the reflecting layer. The mask for EUV exposure can be manufactured by processing this mask blank for EUV exposure.
申请公布号 US7935460(B2) 申请公布日期 2011.05.03
申请号 US20080209380 申请日期 2008.09.12
申请人 KABUSHIKI KAISHA TOSHIBA;NEC CORPORATION 发明人 HIRONO MASATOSHI
分类号 B32B17/10;G03F1/22;G03F1/24;H01L21/027 主分类号 B32B17/10
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