发明名称 |
IMPLEMENTATION OF TEMPERATURE-DEPENDENT PHASE SWITCH LAYER FOR IMPROVED TEMPERATURE UNIFORMITY DURING ANNEALING |
摘要 |
<p>The present invention provides a method of annealing a semiconductor by applying a temperature-dependant phase switch layer to a semiconductor structure. The temperature-dependant phase switch layer changes phase from amorphous to crystalline at a predetermined temperature. When the semiconductor structure is annealed, electromagnetic radiation passes through the temperature-dependant phase switch layer before reaching the semiconductor structure. When a desired annealing temperature is reached the temperature-dependant phase switch layer substantially blocks the electromagnetic radiation from reaching the semiconductor structure. As a result, the semiconductor is annealed at a consistent temperature across the wafer. The temperature at which the temperature-dependant phase switch layer changes phase can be controlled by an ion implantation process.</p> |
申请公布号 |
SG170084(A1) |
申请公布日期 |
2011.04.29 |
申请号 |
SG20110016706 |
申请日期 |
2008.09.05 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
HYIA POON CHYIU;SEE ALEX;SHENG ZHOU MEI |
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