| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for polishing a semiconductor wafer that has a high polishing speed and small variation in polishing speed against variation in concentration, and a polishing method for the semiconductor wafer using the same, and to provide a composition for polishing a semiconductor wafer which is small in content of alkali metal. SOLUTION: The composition for polishing the semiconductor wafer contains colloidal silica composed of an aspherical heteromorphic silica particle group such that urea is fixed in particles and/or surfaces of the particles. The composition for polishing the semiconductor wafer preferably has a 40 to 300 mol ratio of silica/urea, an average short diameter of the aspherical heteromorphic silica particles having urea fixed through a transmission electron microscope is 7 to 30 nm, and a long diameter/short diameter ratio is 1.2 to 10, an average value of the long diameter/short diameter ratio being preferably 1.2 to 5. COPYRIGHT: (C)2011,JPO&INPIT |
