| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of depositing a film of high quality with excellent reproducibility by suppressing variation in temperature control of a substrate. SOLUTION: In a state that an evaporation source 12 and a plasma generation space, and a substrate 14 held by a substrate holding unit are separated by a shutter 20, the evaporation source is heated to generate plasma 105. The substrate is heated by a heating source 13a incorporated into a substrate susceptor 13, and the substrate is heated by supplying the radiation heat calorie equivalent to that reaching the shutter from the evaporation source and plasma by a radiation heat source arranged on a surface on the substrate side of the shutter. The shutter is opened in a state that the temperature of the substrate reaches the predetermined value, and the vapor from the evaporation source is made to pass through the plasma and deposited on the substrate. Thus, even when the shutter is opened, any variation of the substrate temperature can be suppressed. COPYRIGHT: (C)2011,JPO&INPIT |
