发明名称 PROCESS OF FORMING AN ELECTRODE ON THE FRONT-SIDE OF A NON-TEXTURED SILICON WAFER
摘要 <p>A process for the production of a front-side electrode on a non-textured silicon wafer having an ARC layer on its front-side, wherein the front-side electrode is printed from a silver paste and fired, wherein the silver paste comprises (i) an inorganic content comprising (a) 93 to 95 wt.-% of electrically conductive metal powder comprising 90 to 100 wt.-% of silver powder, (b) 1 to 7 wt.-% of at least one glass frit, (c) 0 to 6 wt.-% of at least one solid inorganic oxide and (d) 0 to 6 wt.-% of at least one compound capable of forming a solid inorganic oxide on firing and (ii) an organic vehicle, wherein the weight ratio between the electrically conductive metal powder and the glass frit plus solid inorganic oxide is >13 to 19 in the fired state.</p>
申请公布号 WO2011049820(A1) 申请公布日期 2011.04.28
申请号 WO2010US52782 申请日期 2010.10.15
申请人 E. I. DU PONT DE NEMOURS AND COMPANY;HANG, KENNETH, WARREN;WHITTLE, BEN;YOUNG, RICHARD, JOHN, SHEFFIELD 发明人 HANG, KENNETH, WARREN;WHITTLE, BEN;YOUNG, RICHARD, JOHN, SHEFFIELD
分类号 H01B1/22 主分类号 H01B1/22
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