发明名称 VERTICALLY INTEGRATED PROCESSING CHAMBER
摘要 A method and apparatus for plasma processing of substrates in a substantially vertical orientation is described. Substrates are positioned on a carrier comprising at least two frames oriented substantially vertically. The carrier is disposed in a plasma chamber with an antenna structure positioned between the substrates. Multiple plasma chambers may be coupled to a transfer chamber with a turntable for directing the carrier to a target chamber. A loader moves substrates between the carrier and a load-lock chamber in which substrates are staged in a substantially horizontal position.
申请公布号 US2011097518(A1) 申请公布日期 2011.04.28
申请号 US20100914996 申请日期 2010.10.28
申请人 APPLIED MATERIALS, INC. 发明人 OLGADO DONALD J.K.
分类号 H05H1/46;C23C16/453 主分类号 H05H1/46
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