| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a back-illuminated solid-state imaging device that prevents depletion of a light irradiation surface side to thereby reduce a dark current. <P>SOLUTION: The solid-state imaging device includes an imaging area 12 in which a plurality of pixels 1 containing a photoelectric conversion unit and signal scanning circuit are located on a semiconductor substrate 30, and is a solid-state imaging device of a back irradiation type whose light irradiation surface is formed on a substrate surface opposed to the surface of the semiconductor substrate 30 on which the signal scanning circuit is formed. The solid-state imaging device includes a silicon oxide film 34 positioned on the semiconductor substrate on the light irradiation surface side, a p-type amorphous silicon compound layer 33 positioned on the silicon oxide film, and a hole accumulation layer 35 which is formed of the a p-type amorphous silicon compound layer near an interface BF between the semiconductor substrate of the light irradiation surface side and silicon oxide film. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
