| 摘要 |
PROBLEM TO BE SOLVED: To provide voids in an STI region for forming a bulk FinFET. SOLUTION: An integrated circuit structure includes a substrate 20, two insulation regions 40 on the substrate 20, one of which includes a void 38 therein, and a first semiconductor strip 42 which is between the two insulation regions 40 and adjacent thereto. The first semiconductor strip 42 includes a top portion forming a fin 60 on top surfaces of the two insulation regions 40. COPYRIGHT: (C)2011,JPO&INPIT
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