| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device allowing the structure thereof to be simplified. SOLUTION: When etching a second interlayer film 16, a type of an etching gas or etchant is selected so that the etching rate of a first interlayer film 14 becomes smaller than the etching rate of the second interlayer film 16. The first interlayer film 14 is formed with silicon nitride (SiN) or the like having a dense molecular density. Accordingly, the first insulating layer 14 functions as an etching stopper and a diffusion inhibitor film. Since it is not necessary to form an etching stopper film and a diffusion inhibitor film separately, the structure and the manufacturing process of this semiconductor device can be simplified. COPYRIGHT: (C)2011,JPO&INPIT |
