| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus and method, applying a heat treatment to a substrate with high in-plane uniformity. SOLUTION: A wafer W is placed on a spin chuck 21, and while it is rotated, a heating liquid is applied from a heating liquid supply nozzle 5 to the central part of the wafer W. After the heating liquid is uniformly spread over the surface of the wafer W, the rotation is stopped to perform heating treatment with the wafer W. After the heating treatment, a cooling liquid is supplied from a cooling liquid supply nozzle 6 to the central part of the wafer W while the wafer W is rotated. After the cooling liquid is uniformly spread on the surface of the wafer W, the rotation is stopped to perform cooling treatment with the wafer W. Then, the wafer W is rotated to sputter the cooling liquid. COPYRIGHT: (C)2011,JPO&INPIT |
