发明名称 RESIST COMPOSITION AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition which shows high resolution, good configuration, a depth of focus (DOF), a good mask error factor (MEF) and good CD uniformity (CDU). <P>SOLUTION: The resist composition comprises a resin comprising repeating units derived from compounds represented by formulae (I) and (II), wherein R<SP>1</SP>and R<SP>3</SP>represent H, halogen-substituted alkyl or the like; T represents an alicyclic hydrocarbon group which may be substituted by halogen, hydroxyl, alkyl, alkoxy or the like, provided that -CH<SB>2</SB>- contained in the group is replaced with one -SO<SB>2</SB>- and may further be displaced by -CO-, -O- or the like; Z<SP>1</SP>represents a saturated hydrocarbon group which may have a substituent, provided that -CH<SB>2</SB>- contained in the group may be replaced with -CO-, -O- or the like; R<SP>4</SP>and R<SP>5</SP>represent H, methyl or the like; and R<SP>6</SP>represents 1-6C alkyl or the like. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011085814(A) 申请公布日期 2011.04.28
申请号 JP20090239650 申请日期 2009.10.16
申请人 SUMITOMO CHEMICAL CO LTD 发明人 ICHIKAWA KOJI;HAH JUNG-HWAN;MUKAI YUICHI
分类号 G03F7/039;C08F20/10;C08F20/26;C08F20/38;G03F7/004;H01L21/027 主分类号 G03F7/039
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