发明名称 COPPER-ELECTROPLATING BATH AND COPPER-ELECTROPLATING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a copper-electroplating bath which can keep the throwing power to a through-hole and a via hole, and the physical properties of a plated film, even when the plating temperature has been set at a high temperature, because a high-molecular compound which works as a leveler and is used as an organic additive does not deteriorate even when the plating temperature has been set at a high temperature, and the balance between an accelerator effect and an inhibitor effect due to the organic additive contained in the plating bath can be adequately kept even on a high temperature condition. SOLUTION: The copper-electroplating bath includes copper sulfate, sulfuric acid and a chloride ion, and further includes a sulfur-containing organic compound and a nitrogen-containing organic compound as organic additives. The nitrogen-containing organic compound includes a high-molecular compound which has been produced through a two-step reaction of making 2 mol of epichlorohydrin react with 1 mol of morpholine in an acidic aqueous solution to produce a reaction product, and making the reaction product react with 1 to 2 mol of imidazole with respect to 1 mol of the morpholine. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011084779(A) 申请公布日期 2011.04.28
申请号 JP20090238460 申请日期 2009.10.15
申请人 C UYEMURA & CO LTD 发明人 ISONO TOSHIHISA;TACHIBANA SHINJI;OMURA NAOYUKI;HOSHI SHUNSAKU
分类号 C25D3/38;C25D7/00;H05K3/18 主分类号 C25D3/38
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