发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.</p> |
申请公布号 |
WO2011048925(A1) |
申请公布日期 |
2011.04.28 |
申请号 |
WO2010JP67196 |
申请日期 |
2010.09.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;AKIMOTO, KENGO;SAKATA, JUNICHIRO;YAMAZAKI, SHUNPEI |
发明人 |
AKIMOTO, KENGO;SAKATA, JUNICHIRO;YAMAZAKI, SHUNPEI |
分类号 |
H01L21/336;G02F1/1368;H01L21/28;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|