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发明名称
Herstellungsverfahren für ein Bauteil ausgehend von einem Substrat mit einer Opferschicht aus einkristallinem Silizium
摘要
申请公布号
DE602009000885(D1)
申请公布日期
2011.04.28
申请号
DE200960000885T
申请日期
2009.06.22
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES
发明人
PERRUCHOT, FRANCOIS;DIEM, BERNARD;LARREY, VINCENT;CLAVELIER, LAURENT;DEFAY, EMMANUEL
分类号
B81C1/00;H03H3/007
主分类号
B81C1/00
代理机构
代理人
主权项
地址
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