METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE, AND SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide substrate, capable of reducing the manufacture cost of a semiconductor device using the silicon carbide substrate, and to provide the silicon carbide substrate. SOLUTION: The method of manufacturing the silicon carbide substrate includes: a step of preparing a base substrate 10 comprising silicon carbide and an SiC substrate 20 comprising single crystal silicon carbide; a step of forming a metal film 31 so as to be in contact on the main surface of the base substrate 10; a step of mounting the SiC substrate 20 so as to be in contact on the metal film 31 and forming a laminated substrate; and a step of bonding the base substrate 10 and the SiC substrate 20 by the metal film 31 by heating the laminated substrate. COPYRIGHT: (C)2011,JPO&INPIT