| 摘要 |
A method for manufacturing a semiconductor device, including: forming a barrier seed Ti layer covering a recess in an insulating film; forming a first barrier TiN layer by sputtering; forming a second barrier TiN layer by sputtering with a substrate bias power higher than that in forming the first barrier TiN layer; forming a first wiring seed Ti layer by sputtering; forming a second wiring seed Ti layer by sputtering with a substrate bias power higher than that in forming the first wiring seed Ti layer; forming a first wiring seed Al layer by sputtering; forming a second wiring seed Al layer by sputtering with a substrate bias power higher than that in forming the first wiring seed Al layer; forming Ti—Al alloy in the recess by a heating; and forming an Al wiring material layer so as to fill the recess therewith by sputtering and heating.
|
