| 摘要 |
Disclosed is a resistance change type nonvolatile memory that has an insulation film structure, is advantageous for the implementation of high integration, and achieves a stable switching characteristic, and a manufacturing method therefor. The memory includes at least an MIM (Metal/Insulator/Metal) structure including an insulation film (2) sandwiched between metal electrodes (1) and (3), and the insulation film (2) includes a laminated structure including a Ta2O5 film and a TiO2 film with a thickness of less than 30 nm. The Ta2O5 film is a stoichiometric amorphous film.
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