FIELD-EFFECT SEMICONDUCTOR DIODE AND METHODS OF MAKING THE SAME

摘要

Field effect semiconductor diodes having semiconductor layers forming a source, (100, 105) a body (140) and a drain (130) of a field effect device, the semiconductor layers forming pedestals having an insulating layer (150), and a gate (160) on sides thereof vertically spanning the body and a part of the source and drain layers, and a conductive contact layer (120) over the pedestals making electrical contact with the drain and the gate, the conductive layer being in contact with the body at least at one position on each pedestal. The conductive layer may be in contact with the body through at least one opening in the source layer, or the source layer may be a discontinuous doped layer, the body layer extending between the discontinuous doped layer forming the source layer to be in electrical contact (145) with the conductive layer. Manufacturing methods are moreover disclosed.