METHOD, DEVICE AND PROGRAM FOR MANUFACTURING SILICON STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide high shape control of a silicon structure having a narrow opening, and formed by combining anisotropic etching high in an aspect ratio with anisotropic etching. SOLUTION: This method for manufacturing a silicon structure includes: a first process S102 of performing trench etching of an aspect ratio ≥15 to silicon having an opening of 1-15 μm using plasma formed by alternately or mixedly introducing etching gas and organic deposition formation gas; a second process S103 of exposing the silicon structure to plasma formed by the organic deposition formation gas at high pressure relative to pressure of each introduction gas in the first process S102; a third process S104 of exposing silicon on the bottom face of a part in the silicon structure subjected to the trench etching by using plasma formed by introducing etching gas at pressure equal to or lower than the pressure of each introduction gas in the first process S102; and a fourth process S106 of exposing the silicon structure to XeF2gas. COPYRIGHT: (C)2011,JPO&INPIT