<p>Disclosed is a semiconductor device which is provided with a first semiconductor device (20) and a second semiconductor device (30) stacked on the first semiconductor device (20). The first semiconductor device (20) has: a first wiring board (21); a first semiconductor element (23) provided on the upper surface of the first wiring board (21); a first electrode (25) provided on the upper surface of the first wiring board (21); and an insulating layer (29) having an opening (29a) that exposes a part of the first electrode (25). The second semiconductor device (30) has: a second wiring board (31); a second semiconductor element (33) provided on the upper surface of the second wiring board (31); a second electrode (35) provided on the lower surface of the second wiring board (31); and an inter-device connecting terminal (37) connected to the second electrode (35). The area of the first electrode (25) portion exposed from the opening (29a) is smaller than the area of the opening (29a).</p>
