| 摘要 |
<p>PURPOSE: A semiconductor device is provided to reduce the size of a cell and suppress a short between gate sources by absorbing a part of stress on the upper side of a source layer in a wire bonding process. CONSTITUTION: A base layer has a first conductive type. A source layer(4) is formed on a first base and has a second conductive type. An insulation layer is formed on the source layer. A plurality of gate structures(GT) penetrate through the base layer. A plurality of conductive units penetrate through the insulation layer and the source layer and are electrically connected to the source layer and the base layer.</p> |
