发明名称 |
Non-volatile memory device for reducing layout area of global wordline decoder and operation method thereof |
摘要 |
A non-volatile memory device includes a memory cell array from which data is read via a plurality of bitlines, which includes a plurality of memory cells having gates respectively connected with a plurality of wordlines, a first type global wordline decoder configured to selectively apply n different voltages, where n is an integer greater than or equal to 3, to a corresponding wordline of the plurality of wordlines in a program mode, and a second type global wordline decoder configured to selectively apply (n−1) different voltages to a corresponding wordline of the plurality of wordlines in the program mode, the second type global wordline decoder having fewer switching elements than the first type global wordline decoder.
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申请公布号 |
US7933154(B2) |
申请公布日期 |
2011.04.26 |
申请号 |
US20080213937 |
申请日期 |
2008.06.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG MYOUNG GON;PARK KI TAE;KIM DOO GON;LEE YEONG TAEK |
分类号 |
G11C16/06;G11C16/08;G11C16/10;G11C16/12 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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