| 摘要 |
The invention relates to the field for purification of silicon speed. A method includes melting silicon speed by electron beam in melting container in vacuum, holding of the melt, pouring the melt into the crucible. The method is characterized by the fact that melting and melt holding are carried out in a stream of inert gas or reactionary gas above the melt surface at a depth of the melt, which is not more than and at maximum power of electron beam that does not lead to the melt boiling. This method allows to get speed, which can be used as raw material for growing single crystals of silicon for solar cells. |
