摘要 |
PROBLEM TO BE SOLVED: To solve the problem, wherein whether emission spectrum of a semiconductor laser supplied with a reference current overlapping a high-frequency current is brought to a multi-mode state cannot be inspected readily with high accuracy in conventional techniques. SOLUTION: A method for inspecting the semiconductor laser includes a step acquiring reference current-to-optical output characteristics, regarding the semiconductor laser supplied with the reference current overlapping the high-frequency current; and the step measuring the number of undulations in a curve indicated by the acquired characteristics. The method for inspecting the semiconductor layer, further, includes the step inspecting whether the emission spectrum of the semiconductor laser is brought to the multi-mode state, on the basis of the measured number. COPYRIGHT: (C)2011,JPO&INPIT
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