发明名称 FIELD-EFFECT TRANSISTOR AMPLIFIER
摘要 A field-effect transistor amplifier is provided, which can maintain excellent RF characteristics and, at the same time, can improve current variation. The field-effect transistor amplifier according to the present invention comprises a field-effect transistor which amplifies an input signal supplied to a gate terminal thereof and outputs the amplified signal from a drain terminal thereof, and a self-bias circuit coupled to a source terminal of the field-effect transistor. The self-bias circuit comprises a resistor, a capacitor, and an adjusting circuit which adjusts RF (high frequency) characteristics and DC (direct current) characteristics. The resistor, the capacitor, and the adjusting circuit are coupled in parallel with each other, and one end of each of them is coupled to the source terminal and the other end is coupled to a ground.
申请公布号 US2011090013(A1) 申请公布日期 2011.04.21
申请号 US20100899973 申请日期 2010.10.07
申请人 RENESAS ELECTRONICS CORPORATION 发明人 IMAGAWA KAZUYUKI
分类号 H03F3/04 主分类号 H03F3/04
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