| 摘要 |
PURPOSE: A photo-resist composition is provided to stand patterns into a vertical shape and be adjacently arranged to a lower substrate by preventing a reflow phenomenon in a 4-mask processing process. CONSTITUTION: A photo-resist composition includes an alkaline soluble resin, a photosensitive agent with quinonediazide group, a multivalent phenol compound, and a solvent. The multivalent phenol compound is represented by chemical formula 1. In the chemical formula 1, one or more of R1 to R5 are selected from groups represented by chemical formula 2. Remains of R1 to R5 are hydrogen. In the chemical formula 2, R6 to R9 are hydrogen or C1 to C4 of alkyl group. n is the integer of 0 to 3. R10 is C1 to C6 of alkyl group or C3 to C12 cycloalkyl group. A cyclic X is C3 to C20 of cycloaliphatic hydrocarbon. |
