| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means which improves light extraction efficiency by roughening a surface of a GaN-based light-emitting diode (LED). <P>SOLUTION: In the gallium nitride (GaN) based light-emitting diode (LED), a light is extracted via nitrogen surface (N surface) (42) of the LED. The surface N (42) is roughened into one or more hexagon-shaped cones. If the surface is roughened, since reflection of light which occurs repeatedly inside the LED decreases, more light can be extracted from the LED. The surface N (42) is roughened through anisotropic etching. As the anisotropic etching, dry etching and PEC etching can be cited. <P>COPYRIGHT: (C)2011,JPO&INPIT |
