发明名称 SEMICONDUCTOR RELAY
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent an available frequency band from becoming narrow owing to effects of a stab. <P>SOLUTION: A semiconductor relay 1 includes a light emitting element 2, a light receiving element 2, MOSFETs 4, 5, a terminal piece 6, first to third conductor parts 7, 8, 9 and a package 10. The light receiving element 3 receives light emitted from the light emitting element 2 in response to an input signal and generates a photovoltaic force. The MOSFETs 4, 5 are connected in inverse series by connecting gate electrodes 4a, 5a and source electrodes 4b, 5b to both terminals of the light receiving element 3, respectively, and connecting the source electrodes 4b, 5b with each other. The terminal piece 6 connects an electrode of the light emitting element 2 and an input-side external circuit. The light receiving element 3 is mounted in the first conductor portion 7, and a projecting portion 7a is disposed therein. Drain electrodes (not illustrated) of the MOSFETs 4, 5 are surface-mounted at one terminal side of the second and third conductor portions 8 and 9, and another terminal side is connected with an output-side external circuit. The projecting portion 7a is disposed between the second conductor portion 8 and the third conductor portion 9 when seen from a longitudinal direction. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011082916(A) 申请公布日期 2011.04.21
申请号 JP20090235379 申请日期 2009.10.09
申请人 PANASONIC ELECTRIC WORKS CO LTD 发明人 HOSHINO NARITOSHI;FUJIWARA YOSHIHIRO;KO SHINSUKE
分类号 H03K17/78;H01L31/12 主分类号 H03K17/78
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