| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor structure where an active region of high-indium-content with superior photoelectric characteristics grows with low possibility of having structural deterioration due to alloy segregation. <P>SOLUTION: The semiconductor structure includes: a nucleation layer; a thick InGaN layer that is grown on the nucleation layer; and an active layer that is formed on the thick InGaN layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
