RESISTANCE-CHANGE-TYPE NON-VOLATILE STORAGE DEVICE

摘要

Disclosed is a resistance-change-type non-volatile storage device for reducing variation in resistance values of a low resistance state of a resistance-change element for stable performance. The resistance-change-type non-volatile storage device is provided with an LR write circuit (500) for applying voltage to a memory cell (102) so as to cause a resistance-change element (100) included in the memory cell (102) to change from a high resistance state to a low resistance state; wherein the LR write circuit (500) has a first drive circuit (510) and second drive circuit (520), wherein output terminals are interconnected, for applying voltage to the memory cell (102). The first drive circuit (510) outputs a first current when applying voltage to the memory cell (102), and the second drive circuit (520), when applying voltage to the memory cell (102), outputs a second current if the voltage at the output terminal of the first drive circuit (510) is higher than a predetermined reference voltage VREF, and assumes a high impedance state if the voltage at the output terminal is lower than the reference voltage VREF.