发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element that can improve the yield. SOLUTION: The method of manufacturing a semiconductor element includes the steps of forming a first insulation film on a semiconductor substrate; forming a plurality of stepped portions by an etching portion of the first insulation film, forming a conductive layer on the first insulation film, in such a manner as to cover the stepped portions; and etching a portion of the conductive layer that covers the step portions. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011082411(A) 申请公布日期 2011.04.21
申请号 JP20090234827 申请日期 2009.10.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 HONDA NARUTO
分类号 H01L29/41;H01L21/28;H01L21/336;H01L27/04;H01L29/06;H01L29/40;H01L29/417;H01L29/739;H01L29/78;H01L29/861 主分类号 H01L29/41
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