| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor whose off current and leakage current are suppressed, and a method of manufacturing the thin-film transistor in which the thin-film transistor can be manufactured in good yield. SOLUTION: A metal film is formed on an Si(i) film 13 and an Si(n) film 14 formed successively on a gate electrode 12 via a gate insulating film 12, and etched using a photoresist pattern 22 as a mask to form a source electrode 15 and a drain electrode 16. Through processing using plasma containing oxygen, a side face of the photoresist pattern 22 is set back and an Al oxide coating 17 is formed on side faces and exposed upper surfaces of the source electrode 15 and the drain electrode 16. Parts of surfaces of the Si(n) film 14 and Si(i) film 13 of a channel part 18 are etched using the remaining photoresist pattern 22 and the Al oxide coating 17 as a mask. COPYRIGHT: (C)2011,JPO&INPIT |
