| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of flattening a surface of an insulating film in a shallow trench and a surface of a semiconductor substrate. SOLUTION: A method of manufacturing the semiconductor substrate that achieves element isolation through fine trench isolation includes a first process of forming a groove for fine trench isolation on the semiconductor device substrate, a second process of forming the insulating film over the entire surface of the semiconductor substrate using a CVD method or SOG to fill the groove for fine trench isolation and to deposit the insulating film over the entire substrate, a third process of forming a coating film, on the insulating film, of a coating composition including a polymerizable compound (A) having a polymerizable group, a photopolymerization initiator (B), and a solvent (C), a fourth process of curing the coating film, and a fifth process of flattening the substrate surface by simultaneously removing the coating film and the insulating film outside the groove for trench isolation by chemical mechanical polishing (CMP) or dry or wet etching of the surface. COPYRIGHT: (C)2011,JPO&INPIT
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