| 摘要 |
PURPOSE: An anti fuse of a semiconductor device is provided to improve the reliability of an anti-fuse by preventing the rapid increase in resistance due to re-oxidation. CONSTITUTION: In an anti fuse of a semiconductor device, a semiconductor substrate(100) comprises an active area(102) which is defined as an element isolation film(104). The gate insulating layer is formed in the semiconductor substrate. A gate(106) is formed on the gate insulating layer. A center contact plug(108a) is nearest area to the gate. Periphery contact plugs(108b108c,108d) are spaced from the center contact plug to the major axis of the gate.
|
