| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine thin film pattern that has a high aspect ratio, is accurate, and does not have defect such as thinning of a pattern. SOLUTION: On a substrate to be machined, a thin film pattern is formed by using a resist originating from a material containing silicon being formed by patterning and the succeeding glassification treatment, and transferring the resist pattern to a thin film already formed on the substrate to be machined by a dry etching treatment. |
