| 摘要 |
In the method for manufacturing a capacitance sensor according to the present invention, after a protection layer is pattern-formed on the surface of a silicon substrate, a first metal layer is formed on the surface of a silicon substrate so as to be opposed to a protection layer non-formed area on which no protection layer is formed and to expose a part of the protection layer non-formed area. After that, a first insulation layer, a metal sacrificing layer, and a second insulation layer, and a second metal layer are formed on the first metal layer in this order. Then, the metal sacrificing layer is removed by supplying a metal etching solution on the metal sacrificing layer. Further, a part of the silicon substrate is removed by supplying a silicon etching solution to the silicon substrate from the portion, from which the metal sacrificing layer is removed, via the protection layer non-formed area exposed by the removal of the metal sacrificing layer.
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