| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device which is capable of mounting a logic circuit and a metal capacitive element together by adding a small amount of man-hours, and preventing degradation of logic operation properties. SOLUTION: A first interlayer insulation film 13 is formed on a substrate 11, and conductor posts 14A, 14B are formed in the first interlayer insulation film 13. A groove wiring portion insulation film 15 is formed on the top surface of the first interlayer insulation film 13. The groove wiring portion insulation film 15 is removed over the conductor post 14B to form a capacitive opening 151, and a capacitive element insulation film 16 is formed on the top surface of the groove wiring portion insulation film 15. The capacitive element insulation film 16 and the groove wiring portion insulation film 15 are removed over the conductor post 14A to form a wiring groove 152. Metal bodies 17A and 17B are embedded in the capacitive opening 151 and the wiring groove 152. The metal body 17A in the capacitive opening 151 is designated as the upper electrode of the capacitive element, and the metal body 17B of the wiring groove 152 is designated as a logic wiring. COPYRIGHT: (C)2011,JPO&INPIT |
