发明名称 METHOD OF CRYSTALLIZING AMORPHOUS SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To accurately and selectively crystallize only one of semiconductor films arranged adjacent to each other, to form an amorphous TFT and a microcrystal silicon TFT on the same transparent insulating substrate at the same time, and to provide a TFT with amorphous silicon and microcrystal silicon mixed in a semiconductor layer. SOLUTION: The method of crystallizing an amorphous semiconductor film includes: a step of sequentially forming, on a transparent insulating substrate, a gate electrode, a gate insulating film, an amorphous semiconductor film and a translucent insulating film; a step of patterning and forming a metal film having an opening on the translucent insulating film; and a laser annealing step of converting the amorphous semiconductor film into a crystalline semiconductor film only in a region exposed by the opening by causing a metal film to function as a mask to emit a laser thereto. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011077441(A) 申请公布日期 2011.04.14
申请号 JP20090229635 申请日期 2009.10.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAYOSHI ICHIJI;TAKEGUCHI TORU;AOKI KAZUTOSHI
分类号 H01L21/336;G09F9/30;H01L21/20;H01L27/14;H01L29/786 主分类号 H01L21/336
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