发明名称 |
METHOD OF CRYSTALLIZING AMORPHOUS SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To accurately and selectively crystallize only one of semiconductor films arranged adjacent to each other, to form an amorphous TFT and a microcrystal silicon TFT on the same transparent insulating substrate at the same time, and to provide a TFT with amorphous silicon and microcrystal silicon mixed in a semiconductor layer. SOLUTION: The method of crystallizing an amorphous semiconductor film includes: a step of sequentially forming, on a transparent insulating substrate, a gate electrode, a gate insulating film, an amorphous semiconductor film and a translucent insulating film; a step of patterning and forming a metal film having an opening on the translucent insulating film; and a laser annealing step of converting the amorphous semiconductor film into a crystalline semiconductor film only in a region exposed by the opening by causing a metal film to function as a mask to emit a laser thereto. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011077441(A) |
申请公布日期 |
2011.04.14 |
申请号 |
JP20090229635 |
申请日期 |
2009.10.01 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
YAMAYOSHI ICHIJI;TAKEGUCHI TORU;AOKI KAZUTOSHI |
分类号 |
H01L21/336;G09F9/30;H01L21/20;H01L27/14;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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