| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a mold for imprinting which can smoothly proceed dry etching to a hard mask layer and forms a fine pattern with high pattern accuracy. SOLUTION: The method has a process in which in at least one part on a substrate 1 having a pattern formed of grooves, a hard mask layer including a conductive layer 2 formed of a material containing a compound containing Ta as a main component or an element of at least one of Hf and Zr or its compound and an anti-oxidation layer 3 for the conductive layer which is formed on the conductive layer is formed, and before the remaining hard mask layer is removed, in order to manufacture the mold 20 for imprinting from a mold 10, the hard mask layer is removed by dry etching using a reducing gas. COPYRIGHT: (C)2011,JPO&INPIT
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