发明名称 SEMICONDUCTOR DEVICE AND POWER CONVERTER USING THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that a flywheel diode using a conventional pn junction used for a power converter is large in conduction loss due to a large forward voltage since its life time is controlled to be short, and is further large in switching loss due to a large reverse recovery current at reverse recovery, resulting in a large loss in the power converter. <P>SOLUTION: A semiconductor device lets a current flow via a pn diode which is small in forward voltage when the forward current flows, and reversely recovers it via a Schottky diode which is small in reverse recovery current at reverse recovery. Moreover, it has a switching means between the pn diode and the Schottky diode. It can reduce a loss at reverse recovery by lowering the forward voltage of a flywheel diode, therefore a semiconductor device with a small loss and further a power converter with the same can be provided. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011078187(A) 申请公布日期 2011.04.14
申请号 JP20090225914 申请日期 2009.09.30
申请人 HITACHI LTD 发明人 MORI MUTSUHIRO
分类号 H02M7/48;H01L29/47;H01L29/861;H01L29/872 主分类号 H02M7/48
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