| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method suppressing fluctuation in element characteristics. SOLUTION: After formation of an aluminum (Al) film 2 on a silicon (Si) substrate 1, the silicon substrate 1 formed with the aluminum film 2 is put into a furnace to sinter the silicon substrate 1 and the aluminum film 2. At that time, the heat treatment temperature is adjusted to conform to the concentration of oxygen in the furnace. A deposited nucleus in which zinc (Zn) atoms are substituted for Al atoms is formed on a surface of the Al film 2 to grow a nickel (Ni) plating layer by electroless plating treatment using the Zn atoms as a starter. COPYRIGHT: (C)2011,JPO&INPIT |
