发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.
申请公布号 US2011084399(A1) 申请公布日期 2011.04.14
申请号 US20100901021 申请日期 2010.10.08
申请人 RENESAS ELECTRONICS CORPORATION 发明人 FURUMIYA MASAYUKI;NAKASHIBA YASUTAKA;TANABE AKIRA
分类号 H01L23/48 主分类号 H01L23/48
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