| 发明名称 |
METHOD FOR FORMING DIELECTRIC THIN FILM, AND THIN FILM CAPACITOR COMPRISING THE DIELECTRIC THIN FILM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a dielectric thin film capable of expressing high tunability when used for a thin film capacitor and the like, and a thin film capacitor and a tunable device comprising a dielectric thin film obtained by the method. <P>SOLUTION: When a dielectric thin film composed of Ba<SB>1-x</SB>Sr<SB>x</SB>Ti<SB>y</SB>O<SB>3</SB>(wherein 0.2<x<0.6 and 0.9<y<1.1) is formed by a sol-gel method, the process from coating to firing is carried out 2-9 times. The thickness of the thin film formed after the first firing is set to be 20-80 nm, and the thickness of each thin film formed after the second to ninth firing is set to be 20 to <200 nm. Each firing from the first firing to the ninth firing is carried out by heating to a predetermined temperature within the range of 500-800°C at a heating rate of 1-50°C/min at atmospheric pressure. The total thickness of the dielectric thin film is set to be 100-600 nm. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011073960(A) |
申请公布日期 |
2011.04.14 |
| 申请号 |
JP20100192655 |
申请日期 |
2010.08.30 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
SAKURAI HIDEAKI;WATANABE TOSHIAKI;SOYAMA NOBUYUKI |
| 分类号 |
C01G23/00;H01B3/00;H01B3/12;H01G7/02;H01G7/06 |
主分类号 |
C01G23/00 |
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