| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an infrared detection device that is improved in sensitivity by enhancing internal photoelectric effect by equivalently increasing a thickness of a platinum silicide layer. <P>SOLUTION: The infrared detection device is improved in sensitivity by enhancing the internal photoelectric effect by equivalently increasing the thickness of the platinum silicide layer. For the purpose, the infrared detection device includes a silicon substrate having groove parts of predetermined depth formed at predetermined intervals in a principal surface part, the platinum silicide layer formed at the principal surface part and on upper surfaces of the groove parts, and forming a Schottky barrier diode with the silicon substrate, and a reflective metal layer formed at an upper surface part of the platinum silicide layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
