发明名称 |
Group III-V semiconductor device with strain-relieving interlayers |
摘要 |
According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer. |
申请公布号 |
US2011084311(A1) |
申请公布日期 |
2011.04.14 |
申请号 |
US20090587964D |
申请日期 |
2009.10.14 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
NELSON SCOTT;BIRKHAHN RONALD;HUGHES BRETT |
分类号 |
H01L29/205;H01L21/20 |
主分类号 |
H01L29/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|