LOW DIELECTRIC CONSTANT INSULATING FILM AND FORMATION METHOD THEREFOR

摘要

Disclosed is a low dielectric constant insulating film comprising straight chain molecules in which a plurality of basic molecules with an SiO structure have been linked in a straight chain, and a polymer that is formed by linking a plurality of the straight chain molecules by including binder molecules with an SiO structure therebetween and that comprises Si atoms, O atoms, C atoms, and H atoms. When the sum total is 100% for the signal area of a signal indicating a linear SiO structure that is visible at a wavenumber of approximately 1020 cm-1, a signal indicating a network SiO structure that is visible at a wavenumber of approximately 1080 cm-1, and a signal indicating a cage SiO structure that is visible at a wavenumber of approximately 1120 cm-1, from among the peak signals of a spectrum obtained by means of analysis with Fourier transform infrared spectroscopy of said low dielectric constant insulating film, the area ratio of the signal indicating a linear SiO structure is at least 49%; and when the sum total is 100% for the signal amount of a signal indicating Si(CH3) that is visible at a wavenumber of approximately 7 cm-1 and the signal amount of a signal indicating Si(CH3)2 that is visible at a wavenumber of approximately 800 cm-1, from among the peak signals of the aforementioned spectrum, the signal amount of the signal indicating Si(CH3)2 is at least 66%.