发明名称 HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus that can improve the flow velocity distribution of a gas supplied into a chamber and can control the disturbed temperature distribution of a substrate. SOLUTION: The gas piping 85 is connected to a first buffer space 81, at a side opposite to the side where a gas pipe 83 is connected. The base end section of the gas piping 85 is connected to a nitrogen gas supply source 87. A valve 86 is inserted at an intermediate part of the gas piping 85. If the valve 86 is opened, nitrogen gas is supplied to the first buffer space 81 from the nitrogen gas supply source 85 via the gas piping 85. The nitrogen gas flowing into the first buffer space 81 is supplied to the second buffer space 82 via the gas pipe 83. The nitrogen gas flowing into the second buffer space 82 passes through a slit-shaped exhaust nozzle 84 and is supplied to a heat treatment space 6 inside the chamber 6. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011077143(A) 申请公布日期 2011.04.14
申请号 JP20090224734 申请日期 2009.09.29
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 NOZAKI KIMIHIDE
分类号 H01L21/26;H01L21/265 主分类号 H01L21/26
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